Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference13 articles.
1. Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
2. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
3. Accelerated crucible rotation: A novel stirring technique in high-temperature solution growth
4. Transport phenomena in crystal growth from solution
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3. Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth;Journal of Crystal Growth;2019-12
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