Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3versus SiO2/HfO2/SiO2-Reference-Cited by-同舟云学术

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Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al2O3/HfO2/Al2O3versus SiO2/HfO2/SiO2

Published:2011-10-01 Issue:10S Volume:50 Page:10PB06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Sang-Uk,Kwon Hyuk-Min,Han In-Shik,Jung Yi-Jung,Kwak Ho-Young,Choi Woon-Il,Ha Man-Lyun,Lee Ju-Il,Kang Chang-Yong,Lee Byoung-Hun,Jammy Raj,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. Physical and electrical characterization of HfO2 metal–insulator–metal capacitors for Si analog circuit applications

2. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

3. High-Density and Low-Leakage-Current MIM Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Insulators

4. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

5. High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning

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