Analysis of Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Fullerene Resist
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference40 articles.
1. Resist blur and line edge roughness
2. Recent status and future direction of EUV resist technology
3. Status of EUV lithography at IMEC
4. 22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool
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1. Relationship between Defect Risks and Effective Reaction Radius for Deprotection in Chemically Amplified Resist Process for Extreme Ultraviolet Lithography;Journal of Photopolymer Science and Technology;2024-05-31
2. Relationship between Resolution Blur and Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme-Ultraviolet Lithography;Journal of Photopolymer Science and Technology;2018-06-25
3. Theoretical study on effects of photodecomposable quenchers in line-and-space pattern fabrication with 7 nm quarter-pitch using chemically amplified electron beam resist process;Japanese Journal of Applied Physics;2017-02-27
4. Relationship between Sensitization Distance and Photon Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography;Journal of Photopolymer Science and Technology;2017
5. Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography);SPIE Proceedings;2016-03-25
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