Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Thin-Film Transistors with Six-Step Photomask Structure-Reference-Cited by-同舟云学术

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Electrical Characteristics of Low-Temperature Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Thin-Film Transistors with Six-Step Photomask Structure

Published:2011-06-01 Issue:6R Volume:50 Page:061401
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Sang-Jin,Park Jae-Hoon,Oh Kum-Mi,Lee Seok-Woo,Lee Kyung-Eon,Shin Woo-Sup,Jun Myung-chul,Yang Yong-Suk,Hwang Yong-Kee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. 7.2: Realization of 6Mask LTPS CMOS Panel for AMLCD Application

2. A Novel Five-Photomask Low-Temperature Polycrystalline Silicon CMOS Structure for AMLCD Application

3. An empirical model for device degradation due to hot-carrier injection

4. Physical model of drain conductance, g/sub d/, degradation of NMOSFET's due to interface state generation by hot carrier injection

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS;Journal of Information Display;2017-10-02

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