Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference41 articles.
1. Small band gap bowing in In1−xGaxN alloys
2. Effects of the narrow band gap on the properties of InN
3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
4. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
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1. Progress in Thin Film Solar Cell and Advanced Technologies for Performance Improvement;Encyclopedia of Smart Materials;2022
2. Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells;Vacuum;2017-06
3. Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration;Applied Physics A;2016-10
4. Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells;Solar Energy Materials and Solar Cells;2016-02
5. Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions;Journal of The Electrochemical Society;2016
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