Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range-Reference-Cited by-同舟云学术

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Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range

Published:2018-04 Issue:4 Volume:11 Page:638-645
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Siemieniec Ralf¹,Braz Cesar¹,Blank Oliver¹

Affiliation:

1. Infineon Technologies Austria AGSiemensstrasse 2VillachAustria

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0385

Reference24 articles.

1. http://www.qfdonline.com/

2. http://www.webducate.net/qfd/qfd.html

3. Development of low‐voltage power MOSFET based on application requirement analysis;Siemieniec R.;Facta Univ. Niš Series, Electron. Energ.,2015

4. 2005 Proc. EPE 2005 Dresden A. Schlögl F. Hirler J. Ropohl A new robust power MOSFET family in the voltage range 80–150 V with superior low RDSon excellent switching properties and improved body diode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boosting efficiency in resonant converters by the use of a new advanced power MOSFET technology;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. Experimental Characterization of Silicon and Gallium Nitride 200 V Power Semiconductors for Modular/Multi-Level Converters Using Advanced Measurement Techniques;IEEE Journal of Emerging and Selected Topics in Power Electronics;2020-09

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