Boosting efficiency in resonant converters by the use of a new advanced power MOSFET technology
Author:
Affiliation:
1. Infineon Technologies Austria AG,Villach,Austria
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264444.pdf?arnumber=10264444
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4. Design of Resonant Half-Bridge converter using IRS2795(1,2) Control IC, Application Note AN-1160;ding,0
5. Theoretical Analysis and Optimal Design of LLC Resonant Converter;jung;EPE 2007,0
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06
2. Next step in power MOSFET evolution boosts application efficiency;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
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