Turn‐off analysis of FS‐IGBTs based on a simplified analytical model-Reference-Cited by-同舟云学术

Turn‐off analysis of FS‐IGBTs based on a simplified analytical model

Published:2017-11-02 Issue:15 Volume:10 Page:2133-2142
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Ding Shun¹,Xing Yan¹,Wu Hongfei¹,Hu Haibing¹,Wang Jun¹

Affiliation:

1. Center for More‐Electric‐Aircraft Power SystemNanjing University of Aeronautics and AstronauticsNanjingPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0175

Reference22 articles.

1. 2000 Proc. Int. Symp. on Power Semiconductor Devices and Ics Toulouse T. Laska M. Munzer F. Pfirsch The field stop IGBT (FS IGBT). A new power device concept with a great improvement potential 355 358

2. 2015 Proc. PCIM Europe 2015 Nuremberg Germany V. Crisafulli M. Antretter Design considerations to increase power density in induction cooking applications using the new field stop II technology IGBTs 1 8

3. 2012 Proc. IPEMC J. Ying H. Gan High power conversion technologies & trend 1766 1770

4. 2004 Proc. 16th ISPSD Kitakyushu Japan M. Otsuki Y. Onozawa T. Yoshiwatari 1200 V FS‐IGBT module with enhanced dynamic clamping capability 339 342

5. A study on the short-circuit capability of field-stop igbts

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