Highly reliable joining for high‐temperature power modules: Ni–Sn DSLID with an Al sheet-Reference-Cited by-同舟云学术

Highly reliable joining for high‐temperature power modules: Ni–Sn DSLID with an Al sheet

Published:2019-01-25 Issue:3 Volume:12 Page:492-497
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Ito Hirofumi¹,Kuwahara Makoto¹,Kadoura Hiroaki¹,Usui Masanori¹

Affiliation:

1. Toyota Central R&D Labs. Inc.41‐1 YokomichiNagakuteAichi480‐1192Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2018.5590

Reference22 articles.

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2. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

3. A Survey of Wide Bandgap Power Semiconductor Devices

4. 2016 Proc. Electric Vehicle Technology & Automobile Power Electronics Japan Conf. (EVTeC and APE) Japan L. Bartolomeo L. Abbatelli M. Macauda Wide band gap materials: revolution in automotive power electronics

5. Pb‐free high temperature solder joint for power semiconductor devices;Yamada Y.;Trans. Jpn. Inst. Electron. Packag.,2009

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