Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices-Reference-Cited by-同舟云学术

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Published:2019-12 Issue:15 Volume:12 Page:3882-3892
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Honda Shigeto¹,Minato Tadaharu¹,Shimizu Kazuhiro¹,Furukawa Akihiko¹,Terasaki Yoshiaki¹,Hatade Kazunari¹,Takata Yoshifumi¹

Affiliation:

1. Power Device WorksPower Semiconductor Device Development DepartmentMitsubishi Electric Corporation1‐1‐1 Imajukuhigashi Nishi‐kuFukuokaJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2019.0053

Reference103 articles.

1. New power‐element technology;Minato T.;Mitsubishi Electr. Adv.,2004

2. 2007 Power Conversion Conf. Nagoya (PCC Nagoya) invited Nagoya Japan G. Majumdar T. Minato Recent and future IGBT evolution

3. Future trend of Si power device;Minato T.;Inst. Electron. Inf. Commun. Eng. Electron. Express,2014

4. 2007 Power Conversion Conf. Nagoya (PCC Nagoya) Plenary Speech G. Majumdar Power modules as key component group for power electronics

5. 2000 Proc. Int. Symp. on Power Semiconductor Devices 2000 Toulouse France T. Laska M. Munzer F. Pfirsch The field stop IGBT (FS IGBT) – a new power device concept with a great improvement potential 355 358

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