Affiliation:
1. State Key Laboratory of Power Transmission Equipment & System Security and New TechnologySchool of Electrical EngineeringChongqing UniversityChongqing400044People's Republic of China
Funder
Fundamental Research Funds for the Central Universities
Graduate School, Chongqing University
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference30 articles.
1. Power electronic devices in the future;Hudgins J.;IEEE J. Emerg. Sel. Top. Power Electron.,2013
2. Temperature dependent characteristics of SiC devices: performance evaluation and loss calculation;Jiang D.;IEEE Trans. Power Electron.,2012
3. 2014 Proc. Energy Conversion Congress and Exposition Pittsburgh USA V. Pala E.V. Brunt L. Cheng 10 and 15 kV silicon carbide power MOSFETs for next‐generation energy conversion and transmission systems 449 454
4. A Survey of Wide Bandgap Power Semiconductor Devices
5. 2015 Proc. Energy Conversion Congress and Exposition Montreal Canada H. Chen D. Divan High speed switching issues of high power rated silicon‐carbide devices and the mitigation methods 2254 2260
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