Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function-Reference-Cited by-同舟云学术

Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Published:2015-06 Issue:6 Volume:8 Page:1035-1042
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Am Sokchea¹²³,Lefranc Pierre¹²³,Frey David¹²³

Affiliation:

1. G2ElabUniversity of Grenoble AlpesF‐38000GrenobleFrance

2. G2ElabCNRSF‐38000GrenobleFrance

3. Power Electronic Department11, rue des Mathématiques – BP 4638402St Martin d'Hères CedexFrance

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2014.0434

Reference21 articles.

1. 2005 European Power Electronics Conf. EPE'05 Dresden Germany P. Lefranc D. Bergogne H. Morel B. Allard J.F. Roche Fast over‐current protection of high power IGBT modules

2. 2011 IEEE 23th Int. Symp. on Power Semiconductor Devices and IC's ISPSD T. Simonot N. Rouger J.‐C. Crébier Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip 360 363

3. A low‐profile power converter using printed circuit board (PCB) power transformer with ferrite polymer composite;Tang S.;IEEE Trans. Power Electron.,2001

4. Coreless printed circuit board (PCB) transformers for power MOSFET/IGBT gate drive circuits;Tang S.;IEEE Trans. Power Electron.,1999

5. 2010 Sixth Int. Conf. on Integrated Power Electronics Systems (CIPS) Nuremberg Germany Fraunhofer IISB S. Zeltner Zero voltage switching performance of 1200 v SiC MOSFET 1200 v silicon IGBT and 900 v CoolMos MOSFET 1 6

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