Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode-Reference-Cited by-同舟云学术

Evaluation of reverse recovery characteristic of silicon carbide metal–oxide–semiconductor field‐effect transistor intrinsic diode

Published:2016-04 Issue:5 Volume:9 Page:969-976
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Wang Zhaohui¹,Zhang Junming¹,Wu Xinke¹,Sheng Kuang¹

Affiliation:

1. College of Electrical EngineeringZhejiang University38# Zheda RoadHangzhouPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2014.0965

Reference31 articles.

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3. 2012 Energy Conversion Congress and Exposition (ECCE) 2012 IEEE G. Wang A. Huang C. Li ZVS range extension of 10—A 15 kV SiC MOSFET based 20 kW dual active half bridge (DHB) DC–DC converter 1533 1539

4. High‐efficiency parallel quasi‐resonant current source inverter featuring SiC metal‐oxide semiconductor field‐effect transistors for induction heating systems with coupled inductors

5. An Experimental Evaluation of SiC Switches in Soft-Switching Converters

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