Silicon carbide JFET reverse conduction characteristics and use in power converters-Reference-Cited by-同舟云学术

Silicon carbide JFET reverse conduction characteristics and use in power converters

Published:2012 Issue:8 Volume:5 Page:1282
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET Pwr. Electr.

Author:

Shillington R.,Gaynor P.,Harrison M.,Heffernan W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2011.0404?crawler=true&mimetype=application/pdf

Reference20 articles.

1. SemiSouth Laboratories Inc (2009) SJEP120R125 Normally-OFF Trench Silicon Carbide Power JFET. Available at: www.semisouth.com

2. SemiSouth Laboratories Inc (2009) Application Note AN-SS1: silicon carbide enhancement-mode junction field effect transistor and recommendations for use. Available at: http://semisouth.com/application/AN-SS1rev1.pdf

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