Improved trench MOS barrier Schottky rectifier by dielectric engineering-Reference-Cited by-同舟云学术

Improved trench MOS barrier Schottky rectifier by dielectric engineering

Published:2014-02 Issue:2 Volume:7 Page:325-329
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Ying Wang¹,Likun Xu¹,Kun Ding¹

Affiliation:

1. College of Information and Communication EngineeringHarbin Engineering UniversityHarbin150001People's Republic of China

Funder

Program for New Century Excellent Talents in University

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2013.0173

Reference13 articles.

1. Trench MOS Barrier Schottky (TMBS) rectifier: a Schottky rectifier with higher than parallel plane breakdown voltage;Mehrotra M.;Solid State Electron.,1995

2. 2001 Proc. 13th Int. Symp. Power Semiconductor Devices ICs T. Shimizu S. Kunri M. Kitada A. Sugai 100 V trench MOS barrier Schottky rectifier using thick oxide layer (TO‐TMBS) 243 246

3. 1998 Proc. 10th Int. Symp. Power Semiconductor Devices and ICs S. Mahalingam B.J. Baliga A low forward drop high voltage trench MOS barrier Schottky rectifier with linearly graded doping profile 187 190

4. Improvement of trench MOS barrier Schottky rectifier by using high‐energy counter‐doping trench‐bottom implantation;Juang M.H.;Solid State Electron.,2011

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