Simulation study of a fast speed trench Schottky rectifier with an isolated gate

Abstract

A novel trench Schottky rectifier with an isolated gate (IG-TSR) is proposed and investigated by simulation. It features an isolation of a trench MOS poly-gate from an anode metal in a conventional trench MOS barrier Schottky (TMBS) rectifier. In the proposed fabrication process, the isolation can be created by modifying the layout pattern without any additional process step or manufacturing cost. Because of the isolation of the trench MOS poly-gate from the anode metal, the capacitance between the cathode and the anode (Cds) of the proposed IG-TSR decreases significantly, which results in a fast switching performance. According to the simulation results, IG-TSR holds a 17.4% reduction in reverse recovery time (Trr) and a 22.1% reduction in reverse recovery peak current (Irm) compared with TMBS, and other related forward and reverse performances are basically unchanged. Therefore, the proposed IG-TSR is a competitive device for high frequency and high efficiency applications in power systems.