Two-dimensional solution of the d.c. characteristics for the m.o.s.t.
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19690307?crawler=true&mimetype=application/pdf
Reference13 articles.
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A two-dimensional analytical solution of the poisson and current continuity equations for the short-channel MOSFET;Solid-State Electronics;1990-05
2. Comparison between two-dimensional short-channel MOSFET models;IEE Proceedings I Solid State and Electron Devices;1983
3. A review of two dimensional long channel mosfet modeling;Microelectronics Reliability;1980-01
4. Geometry Effects of Small MOSFET Devices;IBM Journal of Research and Development;1979-11
5. Sub-threshold leakage currents in weakly inverted short channel IGFETS;Solid-State Electronics;1979-08
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