Geometry Effects of Small MOSFET Devices-Reference-Cited by-同舟云学术

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Geometry Effects of Small MOSFET Devices

Published:1979-11 Issue:6 Volume:23 Page:682-688
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Gaensslen F. H.

Publisher

IBM

Subject

General Computer Science

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector;Sensors;2023-06-06

2. The Influence of Source and Drain Junction Depth on the Short-Channel Effect in MOSFETs;IEEE Transactions on Electron Devices;2005-12

3. Finite-element analysis of semiconductor devices: The FIELDAY program;IBM Journal of Research and Development;2000-01

4. Performance trends in high-end processors;Proceedings of the IEEE;1995

5. Development of Isolation Structures for Applications in VLSI;The Kluwer International Series in Engineering and Computer Science;1988

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