Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20081746?crawler=true&mimetype=application/pdf
Reference10 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
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1. Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors;physica status solidi (a);2020-01-13
2. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors;IEEE Journal of the Electron Devices Society;2019
3. Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors;Chinese Physics B;2015-02-26
4. AlGaN Channel HEMT With Extremely High Breakdown Voltage;IEEE Transactions on Electron Devices;2013-03
5. Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts;Japanese Journal of Applied Physics;2011-06-20
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