High power continuous operation of laser diodes at 1064 nm-Reference-Cited by-同舟云学术

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High power continuous operation of laser diodes at 1064 nm

Published:1991 Issue:21 Volume:27 Page:1979
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Murison R.F.,Moore A.H.,Lee S.R.,Holehouse N.,Dzurko K.M.,Cockerill T.M.,Coleman J.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19911226?crawler=true&mimetype=application/pdf

Reference7 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1070nm and 1118nm high power lasers grown with partial strain balancing;Journal of Crystal Growth;2003-02

2. Semiconductor lasers: from homojunctions to quantum dots;Quantum Electronics;2002-12-31

3. Strained-layer InGaAs quantum-well heterostructure lasers;IEEE Journal of Selected Topics in Quantum Electronics;2000-11

4. Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD;Journal of Electronic Materials;1994-02

5. Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD;IEEE Photonics Technology Letters;1993-04

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