High electron mobility in SiGe∕Si n-MODFET structures on sapphire substrates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030871?crawler=true&mimetype=application/pdf
Reference8 articles.
1. High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
2. Sze, S.M.: ‘Modern semiconductor device physics’, (John Wiley and Sons, New York 1998), p. 160
3. Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon
4. Low temperature characterization of modulation doped SiGe grown on bonded silicon‐on‐insulator
5. SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/
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1. Germanium on sapphire by wafer bonding;Solid-State Electronics;2008-12
2. Predicted electrical properties of modulation-doped ZnO-based transparent conducting oxides;Journal of Applied Physics;2005-09
3. High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. High Mobility SiGe/Si n-MODFET Structures and Devices on Sapphire Substrates;MRS Proceedings;2004
5. High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates;MRS Proceedings;2003
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