40 Gbit∕s lumped-element modulator driver in GaAs pHEMTs-Reference-Cited by-同舟云学术

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40 Gbit∕s lumped-element modulator driver in GaAs pHEMTs

Published:2003 Issue:6 Volume:39 Page:516
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Lao Z.,Yu M.,Guinn K.,Lee S.,Ho V.,Xu M.,Radisic V.,Wang K.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030305?crawler=true&mimetype=application/pdf

Reference5 articles.

1. A 54-GHz distributed amplifier with 6-V/sub PP/ output for a 40-Gb/s LiNbO/sub 3/ modulator driver

2. SiGe driver circuit with high output amplitude operating up to 23 Gb/s

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model;Microelectronic Engineering;2004-08

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