SiGe driver circuit with high output amplitude operating up to 23 Gb/s
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/4/16618/00766824.pdf?arnumber=766824
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 1.25-GHz multi-amplitude modulator driver in 0.18 μm SiGe BiCOMOS technology for high speed quantum key distribution;Review of Scientific Instruments;2023-10-01
2. A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution;AIP Advances;2022-12-01
3. Design Considerations for a 100 Gbit/s SiGe-BiCMOS Power Multiplexer With 2 $V_{{\mathrm{pp}}}$ Differential Voltage Swing;IEEE Journal of Solid-State Circuits;2018-09
4. Design Considerations for a 11.3 Gbit/s SiGe Bipolar Driver Array With a $5\times \text {6 V}_{\mathrm {pp}}$ Chip-to-Chip Bondwire Output to an MZM PIC;IEEE Journal of Solid-State Circuits;2016-09
5. 10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25μm SiGe:C BiCMOS;Optics Communications;2015-02
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