SiGe VCOs operating up to 88 GHz, suitable for automotive radar sensors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030865?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
2. 60GHz and 76GHz oscillators in 0.25μm SiGe:C BiCMOS
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of 20GHz high performance LC-VCOs in a 52GHz fT SiGe:C BiCMOS technology;Microelectronics Journal;2010-01
2. Integrated 100-Gb/s ETDM Receiver;Journal of Lightwave Technology;2007-01
3. A 117GHz LC-oscillator in SiGe:C BiCMOS technology;Materials Science in Semiconductor Processing;2005-02
4. SiGe bipolar transceiver circuits operating at 60 GHz;IEEE Journal of Solid-State Circuits;2005-01
5. Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz;Electronics Letters;2005
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