Design of 20GHz high performance LC-VCOs in a 52GHz fT SiGe:C BiCMOS technology

Author:

Nunez–Perez José Cruz,Verdier Jacques,Gontrand Christian

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications;Tang;IEEE Transaction on Microwave Theory and Techniques,2002

2. M. Schröter, HICUM, a scalable physics-based compact bipolar transistor model, User's Manual HICUM/level2, December 2000. On line available: 〈http://www.iee.et.tu-dresden.de/iee/eb/eb_homee.html〉.

3. Measurement of low frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifier;Bruce;IEEE Transactions on Electron Devices,1999

4. P. Chevalier, et al., DC and HF characteristics of a 200GHz fT and fmax SiGeC HBT technology at room and cryogenic temperatures, International SiGe Technology and Device Meeting (ISTDM). Germany, 2004.

5. Monolithic 26GHz and 40GHz VCOs with SiGe heterostructure bipolar transistors;Gruhle;Proceedings of the IEDM,1995

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