Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD-Reference-Cited by-同舟云学术

Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD

Published:2020-07 Issue:15 Volume:56 Page:785-787
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Teng Yan¹,Hao Xiujun²,Zhao Yu³,Wu Qihua³,Li Xin³,Liu Jiafeng⁴,Zhu He¹,Chen Ying¹,Zhu Hong⁴,Huang Yong¹

Affiliation:

1. School of Nano‐Technology and Nano‐Bionics, University of Science and Technology of ChinaHefeiAnhui230026People's Republic of China

2. School of Physical Science and Technology, ShanghaiTech UniversityShanghai201210People's Republic of China

3. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences (CAS)SuzhouJiangsu Province215123People's Republic of China

4. Nano Science and Technology Institute, University of Science and Technology of ChinaHefeiAnhui230026People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.1076

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3. Proposal for strained type II superlattice infrared detectors

4. Development and production of array barrier detectors at SCD;Klipstein P.C.;J. Electron. Mater.,2017

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