Impact of selective Al2O3 passivation on current collapse in AlGaN/GaN HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20072160?crawler=true&mimetype=application/pdf
Reference5 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
3. Mechanism of current collapse removal in field-plated nitride HFETs
4. Effect of gate-source access region stress on current collapse in AlGaN∕GaN HFETs
5. Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon
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1. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation;Journal of Applied Physics;2021-03-28
2. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing;Thin Solid Films;2014-04
3. Reduction of current collapse in the multi-mesa-channel AlGaN/GaN HEMT;physica status solidi (c);2012-02-03
4. Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress;Japanese Journal of Applied Physics;2011-06-20
5. Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress;Japanese Journal of Applied Physics;2011-06-01
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