Layer‐dependent resistance variability assessment on 2048 8‐layer 3D vertical RRAMs-Reference-Cited by-同舟云学术

Layer‐dependent resistance variability assessment on 2048 8‐layer 3D vertical RRAMs

Published:2019-08 Issue:17 Volume:55 Page:955-957
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Gao Rui¹^ORCID,Lei Dengyun¹^ORCID,He Zhiyuan¹,En Yunfei¹,Huang Yun¹

Affiliation:

1. Science and Technology on Reliability Physics and Application of Electronic Component LaboratoryThe No.5 Electronics Research Institute of the Ministry of Industry and Information TechnologyGuangzhou510610GuangdongPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.1556

Reference7 articles.

1. A review of emerging non-volatile memory (NVM) technologies and applications

2. Impact of RTN on pattern recognition accuracy of RRAM‐based synaptic neural network;Chai Z.;Electron Device Lett.,2018

3. Reconfigurable physical unclonable function based on probabilistic switching of RRAM

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