Room temperature Hall mobilities above 1900 cm2∕V s in MBE-grown AlGaN∕GaN HEMT structures-Reference-Cited by-同舟云学术

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Room temperature Hall mobilities above 1900 cm2∕V s in MBE-grown AlGaN∕GaN HEMT structures

Published:2004 Issue:19 Volume:40 Page:1226
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Storm D.F.,Katzer D.S.,Binari S.C.,Shanabrook B.V.,Xu X.,McVey D.S.,Vaudo R.P.,Brandes G.R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20045859?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Dislocation scattering in a two-dimensional electron gas

2. Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases

3. AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates

4. High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

5. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

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1. The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices;Applied Physics Letters;2021-05-31

2. Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate;Journal of Electronic Materials;2021-02-14

3. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates;Journal of Crystal Growth;2016-12

4. III-Nitride Materials and Devices for Power Electronics;ECS Transactions;2013-08-31

5. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels;Journal of Applied Physics;2010-02-15

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