Intensity modulation at 1.06μm wavelength using ultranarrow GaInAsP quantum wells-Reference-Cited by-同舟云学术

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Intensity modulation at 1.06μm wavelength using ultranarrow GaInAsP quantum wells

Published:1989 Issue:15 Volume:25 Page:973
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Zucker J.E.,Bar-Joseph I.,Joyner C.H.,Dentai A.,Divino M.D.,Chemla D.S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890651?crawler=true&mimetype=application/pdf

Reference6 articles.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells;Journal of Crystal Growth;2000-12

2. Growth of strain‐balanced InAsP/InGaP superlattices for 1.06 μm optical modulators;Applied Physics Letters;1993-01-25

3. Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs;Applied Physics Letters;1992-02-10

4. High quality InGaAsP/InP multiple quantum wells for optical modulation from 1 to 1.6 μm;Applied Physics Letters;1991-12-23

5. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers;Applied Physics Letters;1991-04

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