Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates-Reference-Cited by-同舟云学术

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Regrowth of GaAs quantum wells on GaAs liftoff films ‘van der Waals bonded’ to silicon substrates

Published:1989 Issue:2 Volume:25 Page:171
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Yablonovitch E.,Kash K.,Gmitter T.J.,Florez L.T.,Harbison J.P.,Colas E.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890123?crawler=true&mimetype=application/pdf

Reference4 articles.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Continuous-wave InGaN laser diodes on copper and diamond substrates;Journal of Materials Research;2002-04

2. Plasma-assisted InP-to-Si low temperature wafer bonding;IEEE Journal of Selected Topics in Quantum Electronics;2002

3. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off;Applied Physics Letters;1999-09-06

4. Near band-edge field-dependent absorption coefficient and refractive index determined by photocurrent and transmittance measurements;Applied Optics;1999-08-20

5. Damage-free separation of GaN thin films from sapphire substrates;Applied Physics Letters;1998-02-02

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