Very low threshold current density 1.3 µm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951223?crawler=true&mimetype=application/pdf
Reference6 articles.
1. 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition
2. 1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
3. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05
2. Effect of InGaP Barrier Thickness on the Performance of 1.3-µm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes;Japanese Journal of Applied Physics;2002-06-15
3. Characteristics of strain compensated 1.3μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE;Journal of Crystal Growth;2001-07
4. Threshold characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain;Optical Engineering;2001-03-01
5. Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers;Optical and Quantum Electronics;2001
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