AlAsSb/AlGaAsSb Bragg stacks for 1.55 µm wavelength grown by molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951142?crawler=true&mimetype=application/pdf
Reference4 articles.
1. High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates
2. Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 µm wavelength
3. Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
4. Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications
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1. MOVPE growth of long wavelength AlGaAsSb∕InP Bragg mirrors;Electronics Letters;2004
2. Molecular beam epitaxial growth of AlGaPSb and AlGaPSb/InP distributed Bragg reflectors on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP;Superlattices and Microstructures;2002-06
4. MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates;Journal of Crystal Growth;1999-07
5. Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature;Electronics Letters;1998
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