Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor-Reference-Cited by-同舟云学术

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Design and investigation of negative capacitance–based core‐shell dopingless nanotube tunnel field‐effect transistor

Published:2021-03-21 Issue:7 Volume:15 Page:686-694
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Apoorva ¹,Kumar Naveen²^ORCID,Amin S. Intekhab³,Anand Sunny¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering Amity University Noida India

2. Department of Electronics and Communication Engineering Dr. B.R. Ambedkar National Institute of Technology Jalandhar India

3. Department of Electronics and Communication Engineering Jamia Milia Islamia New Delhi India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cds2.12064

Reference22 articles.

1. Short-channel effects in MOSFET's

2. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

3. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations

4. Analog performance investigation of dual electrode based doping‐less tunnel FET;Anand S.;J. Comput. Electron.,2015

5. InAs/Si hetero‐junction nanotube tunnel transistors;Hanna A.N.;Sci. Rep.,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET);Solid-State Electronics;2022-12

2. Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor;Semiconductor Science and Technology;2022-09-16

3. BOX engineering to mitigate negative differential resistance in MFIS negative capacitance FDSOI FET: an analog perspective;Nanotechnology;2021-12-02

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