Base transit time for SiGe-base heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Base transit time for SiGe-base heterojunction bipolar transistors

Published:1991 Issue:16 Volume:27 Page:1408
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Gao G.-B.,Morkoç H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910884?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Patton, G.L., Stork, J.M.C., Comfort, J.H., Crabbe, E.F., Meyerson, B.S., Harame, D.L., and Sun, J.Y.-C.: ‘SiGe-base heterojunction bipolar transistors: physics and design issues’, IEDM Tech. Dig., 1990), p. 13–16

2. Yamazaki, T., Imai, K., Tashiro, T., Tatsum, T., Niino, T., and Nakamae, M.: ‘A SiGe heterojunction bipolar transistor with undoped SiGe spacer for cryo-BiCMOS circuits’, IEDM Tech. Digest, 1990), p. 379–383

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