Analytical expressions of base transit time for SiGe HBTs with retrograde base profiles
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel approach for justification of box-triangular germanium profile in SiGe HBTs;Journal of Semiconductors;2015-02
2. Optimal Ge profile design for base transit time of Si/SiGe HBTs;Materials Science in Semiconductor Processing;2005-02
3. RBS-study of Ge xSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers;Materials Research;2002-06
4. Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution;Solid-State Electronics;2001-12
5. Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect;IEEE Transactions on Electron Devices;2001
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