UV assisted growth of 100 Å thick SiO2at 550°C
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19910570?crawler=true&mimetype=application/pdf
Reference9 articles.
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photon-assisted oxidation and oxide thin film synthesis: A review;Progress in Materials Science;2009-09
2. Origin of unusual rapid oxidation process for ultrathin oxidation (<2 nm) of silicon;Applied Physics Letters;2008-11-17
3. Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review;Journal of Non-Crystalline Solids;2008-01
4. High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C;Applied Physics Letters;2002-09-16
5. Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K;Journal of the American Ceramic Society;2002-08
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