GaAs vertical JFET operated in bipolar mode (GaAs BMFET)
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19910681?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Nishizawa, J.: ‘Static induction transistor’, Nishizawa, J., Semiconductor technologies, Japan annual reviews in electronics, computers and telecomm. 1982, Tokyo, Amsterdam 1981)
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2. New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation;IEEE Transactions on Electron Devices;2006-09
3. A two-dimensional analytical model of homojunction GaAs BMFET structures;Solid-State Electronics;1996-08
4. Ion-implanted normally-off GaAs bipolar-mode FET (BMFET) for application in a wide temperature range;Semiconductor Science and Technology;1996-05-01
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