Semi-insulating layers in InP obtained by Co or Fe ion implantation-Reference-Cited by-同舟云学术

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Semi-insulating layers in InP obtained by Co or Fe ion implantation

Published:1991-05-09 Issue:10 Volume:27 Page:817-818
ISSN:1350-911X
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Vidimari F.,Caldironi M.,Di Paola A.,Chen R.,Pellegrino S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910513?crawler=true&mimetype=application/pdf

Reference11 articles.

1. Sugawara, M., Aoki, O., Nakai, M., Tanaka, K., Yamaguchi, A., and Nakajima, K.: ‘I-V characteristics of Semi-insulating InP epitaxial layers: application to buried heterostructure lasers’, Semi-Insulating III-V Materials, (Ohmsha Ltd., Hakone 1986), p. 597

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Production of semi‐insulating layers inn‐doped InP by Fe implantation;Journal of Applied Physics;1994-11

2. Erratum: Semi-insulating layers in InP obtained by Co or Fe ion implantation;Electronics Letters;1991

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