Noise characteristics of n-channel deep-depletion mode MOS transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-g-2.1992.0061?crawler=true&mimetype=application/pdf
Reference22 articles.
1. Beynon, J.D.E.: Lamb, D.R., Charge-coupled devices and their application, (McGraw-Hill 1980)
2. Sze, S.M., VLSI technology, (McGraw-Hill 1983)
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