Two‐colour THz quantum well photodetectors

Author:

Wang Haixia1,Zhang Rong2,Wang Feng2,Jiao Zhejing3,Shao Dixiang2,Fu Zhanglong2,Zhou Tao2,Tan Zhiyong2,Cao Jungcheng2

Affiliation:

1. Key Laboratory of Terahertz Solid‐State TechnologyShanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences865 Changning RoadShanghai200050People's Republic of China

2. Key Laboratory of Terahertz Solid‐State TechnologyShanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences865 Changning RoadShanghai200050People's Republic of China

3. College of Electronics and Information EngineeringShanghai University of Electric Power2588 Changyang RoadShanghai200090People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference11 articles.

1. Materials for terahertz science and technology;Ferguson B.;J. Phys.,2002

2. Cutting-edge terahertz technology

3. Two‐photon photocurrent spectroscopy of electron intersubband relaxation and dephasing in quantum wells;Schneider H.;Appl. Phys. Lett.,2007

4. Double wavelength selective GaAs/AlGaAs infrared detector device;Kock A.;Appl. Phys. Lett.,1992

5. Four‐band quantum well infrared photodetector array;Bandara S.V.;Infrared Phys. Technol.,2003

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