Low temperature grown poly-SiGe thin film by Au metal-induced lateral crystallisation (MILC) with fast MILC growth rate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031035?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Fabrication of laser-annealed poly-TFT by forming a Si/sub 1-x/Gex thermal barrier
2. Effects of Ge on Material and Electrical Properties of Polycrystalline Si1 − x Ge x for Thin‐Film Transistors
3. Effects of SiH4, GeH4, and B 2 H 6 on the Nucleation and Deposition of Polycrystalline Si1 − x Ge x Films
4. Effects of longitudinal grain boundaries on the performance of MILC-TFTs
5. Au metal-induced lateral crystallisation (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laser-Induced Crystallization of SiGe MEMS Structural Layers Deposited at Temperatures Below 250°C;MRS Proceedings;2009
2. Photonic crystal quantum cascade lasers with improved threshold characteristics operating at room temperature;Applied Physics Letters;2006-11-06
3. Investigation of Ni reaction with sputtered amorphous SiGe thin film on SiO2 substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-01
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