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High-responsivity and high-speed evanescently-coupled avalanche photodiodes

  • Published:2003 Issue:25 Volume:39 Page:1848
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. Lett.

Author:

Demiguel S.,Zheng Xiaoguang,Li Ning,Li Xiaowei,Campbell J.C.,Decobert J.,Tscherptner N.,Anselm A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric field controlled charge transport in an InGaAs/InP photodetector;Applied Physics A;2024-07-02

2. High Responsivity and Reliability of InP-Based Waveguide Avalanche Photodiodes with Butt-Joint Coupled Structure;Journal of Lightwave Technology;2023

3. GeSn on Si avalanche photodiodes for short wave infrared detection;Optical Sensing and Imaging Technologies and Applications;2018-12-12

4. Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems;IEEE Journal of Selected Topics in Quantum Electronics;2018-03

5. Photodetectors;Springer Series in Optical Sciences;2017
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