GeSn on Si avalanche photodiodes for short wave infrared detection-Reference-Cited by-同舟云学术

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GeSn on Si avalanche photodiodes for short wave infrared detection

Published:2018-12-12 Issue: Volume: Page:
ISSN:
Container-title:Optical Sensing and Imaging Technologies and Applications
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Author:

Liu Dachuan,Lin Xiao,Hu Xiaoyan,Zhang Dongliang,Wang Weiping,Ding Ziyu,Wang Zhiqiang,Cheng Buwen,Xue Chunlai

Publisher

SPIE

Reference33 articles.

1. High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product

2. Large multiplication-bandwidth products in APDs with a thin InP multiplication layer;Yasuoka,2003

3. High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

4. High Gain $\times$ Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes

5. Recent advances in AlInAs avalanche photodiodes;Yagyu,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection;Materials Science in Semiconductor Processing;2024-06

2. Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys;Inorganics;2024-03-30

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