Generalised Early factor for compact modelling of bipolar transistors with non-uniform base
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031123?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Reisch, M.: ‘High-frequency bipolar transistors’, (Springer, Berlin 2003)
2. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
3. Quantitative analysis of Si/GexSi1–x/Si heterojunction bipolar transistors with linearly graded Ge profile
4. Getreu, I.E.: ‘Modeling the bipolar transistor’, (Elsevier, Amsterdam 1978)
5. Early effect modeling in SPICE
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3. Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base;Applied Mechanics and Materials;2011-10-24
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