Ultra‐thin Body Buried In 0.35 Ga 0.65 As Channel MOSFETs with Extremely Low Off‐current on Si Substrates-Reference-Cited by-同舟云学术

Ultra‐thin Body Buried In 0.35 Ga 0.65 As Channel MOSFETs with Extremely Low Off‐current on Si Substrates

Published:2021-11 Issue:6 Volume:30 Page:1017-1021
ISSN:1022-4653
Container-title:Chinese Journal of Electronics
language:en
Short-container-title:Chin. j. electron.

Author:

Bo WANG¹²,Peng DING²,Ruize FENG²,Yanfu WANG²,Xiaoyu LIU²,Tangyou SUN¹,Yonghe CHEN¹,Xingpeng LIU¹,Qi LI¹,Yue LI¹,Yingbo LIU¹,Yihui YIN³,Hao ZHAO³,Wei ZHANG⁴,Haiou LI¹,Zhi JIN²

Affiliation:

1. Guangxi Key Laboratory of Precision Navigation Technology and ApplicationGuilin University of Electronic TechnologyGuilin541004China

2. High‐Frequency High‐Voltage Device and Integrated Circuits CenterInstitute of Microelectronics, Chinese Academy of SciencesBeijing100029China

3. The 34th Research Institute of China Electronics Technology Group CorporationGuilin541004China

4. State Key Laboratory of ASIC & SystemFudan UniversityShanghai200433China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Applied Mathematics,Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cje.2021.07.024

Reference17 articles.

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4. Record effective mobility obtained from In0.53Ga0.47As/In0.52Ga0.48As quantum‐well MOSFETs on 300‐mm Si substrate;Son S.;IEEE Electron Device Lett,2017