16Gbit/s multiplexer IC using double mesa Si/SiGe heterojunction bipolar transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19931468?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Sato, F.: ‘Sub-20psec ECL circuits with 50GHz fmax Selfaligned SiGe HBTs’, et al. IEDM Tech. Dig., 1992), p. 397–400
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1. A 30-Gbit/s demultiplexer IC based on Si/SiGe emitter base heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1999-06
2. Hall factor and drift mobility for hole transport in strained Si1−xGexalloys;Journal of Applied Physics;1997-02
3. GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits;Thin Films;1997
4. Novel oxide planarization for integrated high-speed Si/SiGe heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1996-06
5. 24 Gbit/s demultiplexer IC using oxide planarised Si/SiGe heterojunction bipolar transistors;Electronics Letters;1996
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