Si/SiC heterojunction lateral double‐diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

Author:

Duan Baoxing1,Huang Yunjia1,Xing Jingyu1,Yang Yintang1

Affiliation:

1. Key Laboratory of the Ministry of Education for Wide Band‐Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityNo. 2 South TaiBai RoadXi'anShaanxi710071People's Republic of China

Funder

Higher Education Discipline Innovation Project

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Reference21 articles.

1. EflandT.R.TsaiC.‐Y.PendharkarS.: ‘Lateral thinking about power devices (LDMOS)’.Int. Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217) San Francisco CA USA 1998 pp.679–682

2. Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices

3. LudikhuizeA.W.: ‘A review of RESURF technology’.12th Int. Symp. on Power Semiconductor Devices & ICs. Proc. (Cat. No. 00CH37094) Toulouse France 2000 pp.11–18

4. AppelsJ.A.VaesH.M.J.: ‘High voltage thin layer devices (RESURF devices)’.1979 Int. Electron Devices Meeting 1979 pp.238–241

5. Realizing High-Voltage Junction Isolated LDMOS Transistors With Variation in Lateral Doping

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