Hydrogen‐assisted nitrogen incorporation in zinc oxynitride films grown by rf sputtering
Author:
Affiliation:
1. Department of Electrical and Computer Engineering Ajou University Suwon Republic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12053
Reference9 articles.
1. Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
2. The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties;Park J.;Sci. Rep.,2017
3. Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates
4. The critical role of hydrogen for physical sputtering with Ar–H2 glow discharges
5. Effect of Hydrogen on Reactive Sputtering of Transparent Oxide Films
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