Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications
Author:
Affiliation:
1. Applied Physics DepartmentDelhi Technological UniversityDelhiIndia
2. Electrical Engineering DepartmentDelhi Technological UniversityDelhiIndia
3. Electronics & Communication Engineering DepartmentJIITNoidaIndia
Funder
Delhi Technological University
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2020.0041
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